smd type ic www.kexin.com.cn 1 smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 features high current (max. 600 ma) low voltage (max.40 v). 1base 2 collector 3emitter 4 collector absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6v collector current i c 600 ma peak collector current i cm 800 ma peak base current i bm 200 ma total power dissipation ta 25 p tot 1 storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature t amb -65to+150 thermal resistance from junction to ambient r th(j-a) 109 k/w thermal resistance from junction to soldering point r th(j-s) 28 k/w npn switching transistor KZT2222A w
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0;v cb = 60 v 10 na i e =0;v cb =60v;t j = 125 10 a emitter cutoff current i ebo i c =0;v eb =5v 10 na i c =0.1ma;v ce =10v 35 i c =1ma;v ce =10v 50 i c =10ma;v ce =10v 75 i c =10ma;v ce =10v;t a =-55 35 i c = 150 ma; v ce =1v* 50 i c = 150 ma; v ce = 10 v * 100 300 i c = 500 ma; v ce =10v* 40 i c = 150 ma; i b =15ma 300 mv i c = 500 ma; i b =50ma 1v i c = 150 ma; i b =15ma 0.6 1.2 v i c = 500 ma; i b =50ma 2v collector capacitance c c i e =i e =0;v cb =10v;f=1mhz 8pf emitter capacitance c e i c =i c =0;v eb = 500 mv; f = 1 mhz 25 pf turn-on time t on 35 ns delay time t d 10 ns rise time t r 25 ns turn-off time t off 250 ns storage time t s 200 ns fall time t f 60 ns transition frequency f t i c =20ma;v ce =20v;f=100mhz 300 mhz *pulsetest:tp 300 s; ? 0.02. collector cutoff current collector-emitter saturation voltage base-emitter saturation voltage dc current gain v cesat i con = 150 ma; i bon =15ma; i boff =-15ma v besat i cbo h fe KZT2222A
0.1 1 10 100 300 200 0 collector current, i c (ma) dc current gain vs. collector current dc current gain, h fe 100 0.3330 300 400 500 125 25 -40 v ce =5v 0. 1 0.3 100 110 500 collector-emitter saturation voltage vs. collector current collector-emitter voltage, v ce( sat ) (v) 0.2 0.4 collector current, i c (ma) 25 -40 & =10 125 0. 4 0.8 100 110 500 base-emitter saturation voltage vs. collector current base-emitter voltage, v be(sat) (v) 0.6 1 collector current, i c (ma) 125 & =10 -40 25 0. 4 0.8 10 0. 1 1 25 base-emitter on voltage vs. collector current base-emitter on voltage, v be (on) (v) 0.6 1 collector current, i c (ma) v ce =5v 0.2 25 -40 125 ambient temperature, t a ( ) collector-cutoff current vs. ambient temperature c o l l e c t o r c u r r e n t , i c b o ( n a ) 500 0.1 75 25 50 100 125 150 100 1 10 v cb =40v 0.1 1 10 100 12 4 reverse bias voltage (v) emitter transition and output capacitance vs. reverse bias voltage capacitance (pf) 8 16 20 c te c ob f=1mhz smd type ic smd type transistors www.kexin.com.cn 3 typical characteristics
www.kexin.com.cn 4 smd type ic smd type transistors typical characteristics 10 100 1000 160 0 collector current, i c (ma) turn on and turn off times vs. collector current time (ns) 80 240 320 400 v cc =25v t off t on i b1 =i b2 = i c 10 10 100 1000 160 0 collector current, i c (ma) switching times vs. collector current time (ns) 80 240 320 400 v cc =25v t s t f i b1 =i b2 = i c 10 t r t d 0.25 0.75 50 025 75 power dissipation vs. ambient temperature power dissipation, p c (w) 0.5 1 temperature ( ) 150 125 100 0
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